? 2009 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.5 v i ces v ce = v ces , v ge = 0v 300 a t j = 125 c 5 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 50a, v ge = 15v, note 1 2.10 2.70 v t j = 125 c 1.65 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c35a i f110 t c = 110 c36a i cm t c = 25 c, 1ms 400 a i a t c = 25 c50a e as t c = 25 c 500 mj ssoa v ge = 15v, t vj = 125 c, r g = 2 i cm = 150 a (rbsoa) clamped inductive load v ce v ces p c t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms, t = 1minute 2500 v~ i isol < 1ma t = 20 seconds 3000 v~ f c mounting force 20..120/4.5..27 n/lb t l maximum lead temperature for soldering 300 c t sold 1.6mm (0.062 in.) from case for 10s 260 c weight 5 g ds100010a(11/09) v ces = 600v i c110 = 35a v ce(sat) 2.7v t fi(typ) = 55ns IXGR72N60C3D1 genx3 tm 600v igbt with diode high-speed low-vsat pt igbt 40-100 khz switching features z silicon chip on direct-copper bond (dcb) substrate z optimized for low switching losses z square rbsoa z isolated mounting surface z anti-parallel ultra fast diode z avalanche rated z 2500v electrical isolation advantages z high power density z low gate drive requirement applications z high frequency power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts isoplus 247 tm g = gate c = collector e = emitter g c e isolated tab free datasheet http:///
ixys reserves the right to change limits, test conditions, and dimensions. IXGR72N60C3D1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 50a, v ce = 10v, note 1 33 55 s c ies 4780 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 330 pf c res 117 pf q g 175 nc q ge i c = 50a, v ge = 15v, v ce = 0.5 ? v ces 33 nc q gc 72 nc t d(on) 27 ns t ri 37 ns e on 1.03 mj t d(off) 77 130 ns t fi 55 110 ns e off 0.48 0.95 mj t d(on) 26 ns t ri 36 ns e on 1.48 mj t d(off) 120 ns t fi 124 ns e off 0.93 mj r thjc 0.62 c/w r thcs 0.15 c/w ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 isoplus247 (ixgr) outline notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v f i f = 60a, v ge = 0v, note 1 2.5 v t j = 150 c 1.4 v i rm t j = 100 c 8.3 a t rr 35 ns r thjc 0.85 c /w i f = 60a, v ge = 0v, -di f /dt = 100a/ s, v r = 100v i f = 1a, -di/dt = 200a/ s, v r = 30v reverse diode (fred) inductive load, t j = 25 c i c = 50a, v ge = 15v v ce = 480v, r g = 2 , note 2 inductive load, t j =1 25 c i c = 50a, v ge = 15v v ce = 480v, r g = 2 , note 2 free datasheet http:///
? 2009 ixys corporation, all rights reserved IXGR72N60C3D1 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 100 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 02468101214 v ce - volts i c - amperes v ge = 15v 13v 7v 9v 11v 5v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 90 100 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junctiontemperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 100a i c = 50a i c = 25a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 100a 50a 25a t j = 25oc fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc free datasheet http:///
ixys reserves the right to change limits, test conditions, and dimensions. IXGR72N60C3D1 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 0 102030405060708090100 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 100 200 300 400 500 600 v ce - volts i c - amperes t j = 125oc , r g = 2 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v ge - volts v ce = 300v i c = 50a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res free datasheet http:///
? 2009 ixys corporation, all rights reserved IXGR72N60C3D1 fig. 12. inductive switching energy loss vs. gate resistance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 r g - ohms e off - millijoules 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 480v i c = 100a i c = 50a fig. 17. inductive turn-off switching times vs. junction temperature 40 60 80 100 120 140 160 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 65 75 85 95 105 115 125 t d(off) - nanoseconds t f t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 480v i c = 100a i c = 50a fig. 15. inductive turn-off switching times vs. gate resistance 90 100 110 120 130 140 150 160 170 180 190 23456789101112131415 r g - ohms t f - nanoseconds 0 50 100 150 200 250 300 350 400 450 500 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 100a i c = 50a fig. 13. inductive switching energy loss vs. collector current 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 20 30 40 50 60 70 80 90 100 i c - amperes e off - millijoules 0.0 0.8 1.6 2.4 3.2 4.0 4.8 5.6 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 480v t j = 125oc, 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.0 0.8 1.6 2.4 3.2 4.0 4.8 5.6 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 480v i c = 100a i c = 50a fig. 16. inductive turn-off switching times vs. collector current 20 40 60 80 100 120 140 160 180 20 30 40 50 60 70 80 90 100 i c - amperes t f - nanoseconds 70 80 90 100 110 120 130 140 150 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc free datasheet http:///
ixys reserves the right to change limits, test conditions, and dimensions. IXGR72N60C3D1 ixys ref: g_72n60c3(8d)11-25-09-c fig. 19. inductive turn-on switching times vs. collector current 10 20 30 40 50 60 70 80 90 100 110 20 30 40 50 60 70 80 90 100 i c - amperes t r - nanoseconds 18 20 22 24 26 28 30 32 34 36 38 t d ( on ) - nanoseconds t r t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 480v t j = 25oc, 125oc fig. 20. inductive turn-on switching times vs. junction temperature 20 30 40 50 60 70 80 90 100 110 120 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 25 26 27 28 29 30 31 32 33 34 35 t d(on) - nanoseconds t r t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 480v i c = 50a i c = 100a fig. 18. inductive turn-on switching times vs. gate resistance 20 40 60 80 100 120 140 160 23456789101112131415 r g - ohms t r - nanoseconds 25 30 35 40 45 50 55 60 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 50a i c = 100a free datasheet http:///
? 2009 ixys corporation, all rights reserved IXGR72N60C3D1 ixys ref: g_72n60c3(8d)11-25-09-c 200 600 1000 0 400 800 80 90 100 110 120 130 140 0.00001 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.0 0.4 0.8 1.2 1.6 v fr di f /dt v 200 600 1000 0 400 800 0 20 40 60 80 100 1000 0 1000 2000 3000 4000 012 0 20 40 60 80 100 120 140 160 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr a/ s s dsep 2x61-06a z thjc t vj = 100c v r = 300v t vj = 100c v r = 300v t vj = 150c 100c 25c i f = 120a, 60a, 30a i rm q rm i f = 30a, 60a, 120a t vj = 100c v r = 300v t rr v fr i f = 120a, 60a, 30a t vj = 100c i f = 60a fig. 21. forward current i f versus v f fig. 23. peak reversecurrent i rm versus -di f /dt fig. 22. reverse recorvery charge q r versus -di f /dt fig. 26. peak forward voltage v rm and t rr versus -di f /dt fig. 25. recorvery time t rr versus -di f /dt fig. 24. dynamic paraments q r, i rm versus t vj fig. 27. maximum transient thermal impeadance juection to case (for diode) fig. 27. maximum transient thermal impedance (for diode) 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc oc / w free datasheet http:///
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